SST441 vishay siliconix document number: 70250 s-04031?rev. e, 04-jun-01 www.vishay.com 8-1 monolithic n-channel jfet dual
v gs(off) (v) v (br)gss min (v) g fs min (ms) i g typ (pa) | v gs1 ? v gs2 | max (mv) ?1 to ?6 ?25 4.5 ?1 20
monolithic design high slew rate low offset/drift voltage low gate leakage: 1 pa low noise high cmrr: 90 db tight differential match vs. current improved op amp speed, settling time accuracy high-speed performance minimum input error/trimming requirement insignificant signal loss/error voltage high system sensitivity minimum error with large input signal wideband differential amps high-speed, temp-compensated, single-ended input amps high speed comparators impedance converters the SST441 is a monolithic high-speed dual jfet mounted in a single so-8 package. this jfet is an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. the so-8 package is available with tape-and-reel options to support automated assembly (see packaging information). for similar products in to-71 packaging, see the u441 data sheet. s 1 nc d 1 g 2 g 1 d 2 nc s 2 narrow body soic 5 6 7 8 top view 2 3 4 1
gate-drain, gate-source voltage ?25 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . storage temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation : per side a 300 mw . . . . . . . . . . . . . . . . . . . . . . . . total a 500 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.4 mw/ c above 25 c for applications information see an102.
SST441 vishay siliconix www.vishay.com 8-2 document number: 70250 s-04031 ? rev. e, 04-jun-01
limits parameter symbol test conditions min typ a max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a, v ds = 0 v ? 25 ? 35 gate-source cutoff voltage v gs(off) v ds = 10 v, i d = 1 na ? 1 ? 3.5 ? 6 v saturation drain current b i dss v ds = 10 v, v gs = 0 v 6 15 30 ma v gs = ? 15 v, v ds = 0 v ? 1 ? 500 pa gate reverse current i gss t a = 125 c ? 0.2 na v dg = 10 v, i d = 5 ma ? 1 ? 500 pa gate operating current i g t a = 125 c ? 0.2 na gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance g fs v ds = 10 v, i d = 5 ma 4.5 6 9 ms common-source output conductance g os v ds = 10 v, i d = 5 ma f = 1 khz 20 200 s common-source forward transconductance g fs v ds = 10 v, i d = 5 ma 5.5 ms common-source output conductance g os v ds = 10 v, i d = 5 ma f = 100 mhz 30 s common-source input capacitance c iss v ds = 10 v, i d = 5 ma 3.5 common-source reverse transfer capacitance c rss v ds = 10 v, i d = 5 ma f = 1 mhz 1 pf equivalent input noise voltage e n v ds = 10 v, i d = 5 ma f = 10 khz 4 nv ? hz matching differential gate-source voltage | v gs1 ? v gs2 | v dg = 10 v, i d = 5 ma 7 20 mv gate-source voltage differential change with temperature | v gs1 ? v gs2 | t v dg = 10 v, i d = 5 ma t a = ? 55 to 125 c 10 v/ c saturation drain current ratio c i dss1 i dss2 v ds = 10 v, v gs = 0 v 0.98 transconductance ratio c g fs1 g fs2 v ds = 10 v, i d = 5 ma f = 1 khz 0.98 common mode rejection ratio cmrr v dg = 10 to 15 v, i d = 5 ma 90 db notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nnz b. pulse test: pw 300 s duty cycle 3%. c. assumes smaller value in the numerator.
SST441 vishay siliconix document number: 70250 s-04031 ? rev. e, 04-jun-01 www.vishay.com 8-3 ? 0.1 pa ? 1 pa ? 10 pa ? 100 pa ? 1 na ? 10 na ? 100 na 015 10 52025 0 ? 5 ? 4 ? 2 ? 1 15 13 11 7 5 25 20 15 10 5 0 drain current and transconductance vs. gate-source cutoff voltage gate leakage current v gs(off) ? gate-source cutoff voltage (v) v dg ? drain-gate voltage (v) i dss @ v ds = 10 v, v gs = 0 v g fs @ v dg = 10 v, v gs = 0 v f = 1 khz g fs i dss 9 ? 3 output characteristics v ds ? drain-source voltage (v) v gs = 0 v ? 0.4 v ? 0.8 v ? 1.2 v ? 1.6 v ? 2.0 v ? 2.4 v ? 2.8 v 20 01216 8 420 15 10 5 0 v gs(off) = ? 4 v output characteristics v ds ? drain-source voltage (v) 5 01 0.8 0.6 0.4 0.2 4 3 2 0 1 v gs(off) = ? 3 v v gs = 0 v output characteristics v ds ? drain-source voltage (v) 10 01 0.8 0.6 0.4 0.2 8 6 4 0 2 v gs(off) = ? 4 v v gs = 0 v ? 0.4 v ? 0.8 v ? 1.2 v ? 1.6 v ? 2.0 v ? 2.4 v ? 2.8 v output characteristics v ds ? drain-source voltage (v) 20 020 16 12 8 4 16 12 8 0 4 v gs(off) = ? 3 v v gs = 0 v ? 0.4 v ? 0.8 v ? 1.2 v ? 1.6 v ? 2.0 v 25 ? 1.4 v ? 1.6 v ? 0.2 v ? 0.4 v ? 0.6 v ? 0.8 v ? 1.0 v ? 1.2 v i gss @ 125 c i gss @ 25 c t a = 125 c t a = 25 c 5 ma 1 ma 100 a i g @ i d = 5 ma 1 ma 100 a g fs ? forward transconductance (ms) i dss ? saturation drain current (ma) i g ? gate leakage i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma)
SST441 vishay siliconix www.vishay.com 8-4 document number: 70250 s-04031 ? rev. e, 04-jun-01 transfer characteristics gate-source differential voltage vs. drain current voltage differential with temperature vs. drain current common mode rejection ratio vs. drain current (mv) v gs1 v gs2 ? cmrr (db) v gs ? gate-source voltage (v) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) t a = ? 55 c 125 c v gs(off) = ? 3 v v dg = 10 v t a = 25 to 125 c t a = ? 55 to 25 c v dg = 10 v t a = 25 c v dg = 10 ? 20 v 5 ? 10 v v gs1 v gs2 v dg cmrr = 20 log v gs(off) = ? 3 v ? 4 v circuit voltage gain vs. drain current 20 0 ? 1.5 ? 1.0 ? 0.5 ? 2.0 ? 2.5 16 12 8 4 0 0.1 1 10 100 10 1 0.1 1 10 100 10 1 0.1 1 10 150 130 110 90 70 50 110 0.1 100 80 60 40 20 0 on-resistance vs. drain current i d ? drain current (ma) 0.1 1.0 10 200 160 120 80 40 0 v gs(off) = ? 3 v ? 4 v a v g fs r l 1 r l g os assume v dd = 15 v, v ds = 5 v r l 10 v i d v ds = 10 v 25 c v/ c () t v gs1 v gs2 ? r ds(on) ? drain-source on-resistance ( ? ) i d ? drain current (ma) a v ? voltage gain
SST441 vishay siliconix document number: 70250 s-04031 ? rev. e, 04-jun-01 www.vishay.com 8-5 10 100 1 k 100 k 10 k v gs ? gate-source voltage (v) common-source input capacitance vs. gate-source voltage ? input capacitance (pf) c iss v ds = 0 v 15 v f = 1 mhz 10 0 ? 16 ? 20 ? 8 ? 4 8 6 4 2 0 5 v ? 12 common-source reverse feedback capacitance vs. gate-source voltage ? reverse feedback capacitance (pf) c rss v gs ? gate-source voltage (v) v ds = 0 v 15 v f = 1 mhz 5 0 ? 20 ? 16 ? 8 ? 4 4 3 1 0 2 ? 12 output conductance vs. drain current i d ? drain current (ma) t a = ? 55 c 125 c 50 40 30 20 10 0 0.1 1 10 25 c equivalent input noise voltage vs. frequency f ? frequency (hz) v ds = 10 v i d @ 10 ma 20 16 12 8 4 0 v gs = 0 v common-source forward transconductance vs. drain current i d ? drain current (ma) t a = ? 55 c 125 c 0.1 1 10 10 8 2 0 6 4 on-resistance and output conductance vs. gate-source cutoff voltage v gs(off) ? gate-source cutoff voltage (v) r ds @ i d = 1 ma, v gs = 0 v g os @ v dg = 10 v, v gs = 0 v, f = khz r ds g os 250 0 ? 3 ? 5 ? 4 ? 2 ? 1 200 150 100 50 0 100 0 50 25 c v gs(off) = ? 3 v v ds = 10 v f = 1 khz v gs(off) = ? 3 v v ds = 10 v f = 1 khz 5 v s) g os ? output conductance ( r ds(on) ? drain-source on-resistance ( ? ) g os ? output conductance ( s) g fs ? forward transconductance (ms) e n ? noise voltage nv / hz
|
